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| 2N5114 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source 30V 30V -50mA 500mW -55 to 200C -55 to 200C 75 6pF SINGLE P-CHANNEL JFET TO-18 BOTTOM VIEW G 2 3 D S 1 STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. BVGSS VGS(off) VGS(F) VDS(on) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate to Source Forward Voltage Drain to Source On Voltage -0.7 -1.0 -0.7 -0.5 IDSS IGSS IG ID(off) rDS(on) Drain to Source Saturation Current2 Gate Leakage Current Gate Operating Current Drain Cutoff Current Drain to Source On Resistance 5 -5 -10 -10 -10 75 100 -500 -500 -500 150 pA -30 -90 -15 500 -60 500 -5 -25 500 TYP 2N5114 MIN 30 5 10 -1 -1.3 -0.8 -0.6 mA MAX 2N5115 MIN 30 3 6 -1 MAX 2N5116 MIN 30 1 4 -1 V MAX UNIT CONDITIONS IG = 1A, VDS = 0V VDS = -15V, ID = -1nA IG = -1mA, VDS = 0V VGS = 0V, ID = -15mA VGS = 0V, ID = -7mA VGS = 0V, ID = -3mA VDS = -18V, VGS = 0V VDS = -15V, VGS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA VDS = -15V, VGS = 12V VDS = -15V, VGS = 7V VDS = -15V, VGS = 5V VGS = 0V, ID = -1mA Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. gfs gos rds(on) Ciss CHARACTERISTIC Forward Transconductance Output Conductance Drain to Source On Resistance Input Capacitance 20 5 Crss Reverse Transfer Capacitance 6 6 en Equivalent Noise Voltage 20 TYP 4.5 20 75 25 7 pF 7 7 nV/Hz 2N5114 MIN MAX 2N5115 MIN MAX 2N5116 MIN MAX UNIT mS S CONDITIONS VDS = -15V, ID = -1mA f = 1kHz VGS = 0V, ID = 0mA f = 1kHz VDS = -15V, VGS = 0V f = 1MHz VDS = 0V, VGS = 12V f = 1MHz VDS = 0V, VGS = 7V f = 1MHz VDS = 0V, VGS = 5V f = 1MHz VDG = 10V, ID = 10mA f = 1 kHz 100 25 150 25 SWITCHING CHARACTERISTICS (max) SYM. td(on) tr td(off) tf CHARACTERISTIC Turn On Time Turn Off Time 2N5114 6 10 6 15 2N5115 10 20 8 30 2N5116 12 30 10 50 ns UNITS SWITCHING CIRCUIT CHARACTERISTICS SYM. VDD VGG RL RG ID(on) VGS(H) VGS(L) 2N5114 -10V 20V 430 100 -15mA 0V -11V 2N5115 -6V 12V 910 220 -7mA 0V -7V 2N5116 -6V 8V 2k 390 -3mA 0V -5V TO-18 Three Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 SWITCHING TEST CIRCUIT VGG VDD VGS(H) VGS(L) 1.2k RL 0.1F 3 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. RG 7.5k 51 0.050 2 1 3 1.2k Sampling Scope 51 45 0.046 0.036 0.048 0.028 51 NOTES 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW 300s, Duty Cycle 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio n or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 |
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